GaN Technology Director - China Headhunter_Henderson_Guangzhou headhunter&recruitment agency

GaN Technology Director (A Gallium Nitride power devices company)

Benefits：RMB 850K/Year

City：Shenzhen

Experience：8 years

Education：Master or Ph.D.

Language：Mandarin, English

Position temptation：Paid Annual Leave, Performance Bonus, Commercial Insurance,

Job content：

1.Provide leadership and oversight on GaN product development.

2.Lead the design and testing of power GaN devices.

3.Collaborate with foundries and other industry partners to solve critical device performance and reliability

challenges.

4.Explore novel technologies and technical improvements

Job requirement：

1.Ph.D. or Master degree in electrical engineering, microelectronics, or solid state physics, or other related disciplines.

2.More than 8 years of GaN HEMT device engineering and reliability experience.

3.More than 5 years of GaN technology experience in industry.

4.Excellent interpersonal skills, energetic, motivated, and self-driven.

5. Ability to work well within a global matrixed team or environment with minimal supervision.

Company Profile:

is a unique provider of innovative solutions for next-generation Gallium Nitride power devices. We offer anything that you need to take full advantage of the GaN technology with a large portfolio of products such as Driver ICs, GaN power switches, and GaN Schottky Diodes in combination with dedicated assistance and development.

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